Nijmegen --  Nexperia announced that its 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q​) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in electric vehicles and other automobiles.

Nijmegen. Nexperia adds ‘ASFETs for Hotswap and Soft Start’ family with 25 V and 30 V devices with SOA. The PSMNR67-30YLE ASFET produces 2.2x stronger SOA (12 V @100 mS) with an R_DS(on) (max) as low as 0.7 mΩ.

For the first time Nexperia will be part of electronica with a presence in Hall C3, booth 319.

Nexperia announced an extension to its portfolio of low clamping and ultra-low capacitance ESD protection diodes. This portfolio is designed to protect high-speed data lines such as USB 3.2, HDMI 2.0, LVDS, automotive A/V Monitors, displays, and cameras.

Nexperia has announced the availability of 20 V and 30 V MOSFETs in the world's smallest DFN package, the DFN0603. Nexperia already offers ESD protection devices in this package, but has now succeeded in bringing it to their MOSFET portfolio, an industry first

Nexperia has launched a new portfolio of application specific MOSFETs (ASFETs) for automobile airbag applications, headlining with the release of the BUK9M20-60EL single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 packaging.

Nexperia announced its entry into the high-power Silicon Carbide (SiC) diodes market with the introduction of 650 V, 10 A SiC Schottky diodes.