Newark is announcing the availability of Nexperia's new to market, innovative Power Gallium Nitride (GaN) FET range.

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company's high-voltage GaN HEMT H2 technology.

Based on NextPowerS3 technology, this performance doesn?t compromise other parameters

Nexperia will stay an independent company, with the same management team, led by CEO Frans Scheper.

Nexperia released high-reliability automotive (AEC-Q101-qualified) MJD 3 A and 8 A power bipolar transistors, also suitable for consumer and industrial applications.

Nexperia announced that key parts from its SOT23-packaged family of high-performance, general-purpose transistors and switching diodes are now fully-specified for operation up to 175?C degrees.

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