CEA-Leti
MINATEC Campus
GRENOBLE, 38054 [email protected]
https://www.leti-cea.com/cea-tech/leti/english/Pages/Welcome.aspx
CEA-Leti Unveils Breakthrough for Mass-Market, High-Performance, Navigation-Grade Gyroscopes - News
December 29, 2021Working with researchers at Politecnico di Milano, CEA-Leti has developed the world's smallest-footprint MEMS gyroscope that is capable of providing navigation-grade performance. The researchers were able to meet these specifications with a sensor footprint of only 1.3 mm2 by leveraging nano-resistive sensing.
CEA-Leti Launches Direct Analysis to Bring Speed And Efficiency to Food-Safety Testing - Press Release
June 02, 202170th Startup Highlights the World-Class, Basic-Research Institute’s Culture of Encouraging Entrepreneurship Among its Scientists.
CEA-Leti Reports High-Performance Gyroscope For Automotive, Aeronautic, and Industrial Applications - News
January 26, 2021World’s First NEMS-Based Gyroscope Operates at 50 kHz in Severe Environments
CEA-Leti Scientists Demonstrate Machine Learning Technique Exploiting RRAM Devices - News
January 19, 2021CEA-Leti announced that its scientists have demonstrated a machine-learning technique exploiting what used to be considered non-ideal traits of RRAM devices. This overcomes barriers in the development of RRAM-based edge-learning systems.
CEA-Leti Announces Demo of Full Data-Transfer Silicon Photonics Module Delivering 100 Gb/s and Develops Building Blocks for Tb/s - Other
June 23, 2020According to the company, this demonstration opens the way to technology that allows a reduction in the cost, the power consumption.
CEA-Leti Scientists Demonstrate CMOS Device Fabrication at 500?C - News
June 23, 2020VLSI 2020 Paper Details First Proof of Integration of FDSOI CMOS Devices Processed at 500°C, for Further 3D Monolithic Integration.
CEA-Leti Demonstrates Architecture for HPC Devices Using Gate-All-Around Nanosheet Fabrication Process - News
June 15, 2020CEA-Leti demonstrated a fabrication of a gate-all-around (GAA) nanosheet device. The new device is to be used as an alternative to FinFET technology.