CEA-Leti released it has achieved a milestone by integrating a scalable hafnia-zirconia ferroelectric capacitor platform into the back-end-of-line (BEOL) of the 22nm FD-SOI technology node making ferroelectric RAM (FeRAM) a formidable memory solution for cutting-edge nodes. Ferroelectricity in HfO2-based thin films are CMOS compatible and scalable while opening innovation for embedded FeRAM.

Working with researchers at Politecnico di Milano, CEA-Leti has developed the world's smallest-footprint MEMS gyroscope that is capable of providing navigation-grade performance. The researchers were able to meet these specifications with a sensor footprint of only 1.3 mm2 by leveraging nano-resistive sensing.

70^th Startup Highlights the World-Class, Basic-Research Institute’s Culture of Encouraging Entrepreneurship Among its Scientists.

World’s First NEMS-Based Gyroscope Operates at 50 kHz in Severe Environments

CEA-Leti announced that its scientists have demonstrated a machine-learning technique exploiting what used to be considered non-ideal traits of RRAM devices. This overcomes barriers in the development of RRAM-based edge-learning systems.

According to the company, this demonstration opens the way to technology that allows a reduction in the cost, the power consumption.

VLSI 2020 Paper Details First Proof of Integration of FDSOI CMOS Devices Processed at 500°C, for Further 3D Monolithic Integration.