KIRKLAND, Washington. Alliance Memory stated it has extended its portfolio of CMOS DDR4 SDRAMs with a 16Gb device in the 96-ball FBGA form factor, the AS4C1G16D4-062BCN. The DDR4 SDRAM operates at a low +1.2V (±0.06V). It was developed and qualified for utilization in 5g designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs.

Kirkland, Wash. Alliance Memory shared that it has extended its portfolio of low power asynchronous SRAM (LPSRAM) devices. The AS6CE1016A (1Mb) and AS6CE4016B (4Mb) integrate an error-correction code (ECC) for a more reliable LPSRAM When juxtaposed to previous-generation technology, the LPSRAM’s deliver upgraded failure in time (FIT), mean time to failure (MTTF), and characteristics with reduced soft error rates (SER).

KIRKLAND, Wash. — Alliance Memory announced the expansion of its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices designed to support single, dual, and quad SPI modes for computer, consumer, communications, IoT, and mobile markets.

KIRKLAND, Wash., Nov. 07, 2022 Alliance Memory today announced its technology lineup for electronica 2022, taking place Nov. 15-18 at the Trade Fair Center in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company will be highlighting its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets.

Alliance Memory announced its technology lineup for Embedded World 2022, taking place June 21-23 in Nuremberg, Germany. Exhibiting in Hall 1, Stand 639, the company will highlight its latest SRAM, DRAM, flash, and storage memory ICs for embedded platforms.

Alliance Memory introduced two new industrial-grade embedded multi-media card (eMMC) solutions.

AS4C1G8D4 and AS4C512M16D4 High-Speed CMOS DDR4 SDRAMs