Texas Instruments will exhibit its LMG341x series in Hall C4, Booth 131 at Electronica at Messe München in Germany, November 13-16, 2018, complete with its 10-kW cloud-enabled grid link demonstration. The devices include LMG3410R050, LMG3410R070 (latched over-current protection) and LMG3411R070 (cycle-by-cycle over-current).

TI and Siemens have collaborated on TI's LMG3410R050 600-V GaN FET with integrated driver and protection, helping engineers gain 99 percent efficiency and up to 30 percent reduction in power component size as opposed to a traditional silicon design.

TI’s new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages will support applications up to 10 kW. The LMG341x series will help designers create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.

TI's portfolio has 20 million hours of device reliability testing behind it, including accelerated and in-application hard switch testing. Each device also supplies integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.

“TI’s family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies,” according to Texas Instruments. “With integrated <100ns current limiting and over temperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.”

For more information, visit www.TI.com.