Boosting Industrial Power-Conversion Efficiency with Toshiba
August 31, 2022
News
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Toshiba Electronics Europe GmbH released five 1200V silicon carbide (SIC) using its third generation SIC technology to expand on efficient use of energy in high-voltage industrial applications.
By improving the on-resistance x gate-drain charge (RDS(on) x QGD) figure of merit by more than 80%, Toshiba’s latest SiC technology elevates both conduction and switching performance in power-conversion topologies.
The technology is capable of use in EV charging stations, photovoltaic inverters, industrial power supplies, uninterruptible power supplies (UPS), and bidirectional or half-bridge DC-DC converters.Toshiba has embedded Schottky barrier diode (SBD) which was established in prior generations. The SBD boosts the consistency of SiC MOSFETs by defeating “internal parasitic effects to maintain a stable device RDS(on).”
According to Toshiba, “the products have a generous maximum gate-source voltage range, from -10V to 25V, which enhances flexibility to operate in various circuit designs and application conditions. The gate-threshold voltage (VGS(th)) range from 3.0V to 5.0V, ensures predictable switching performance with minimal drift and permits a simple gate-driver design.”
The third generation SiC MOSFETs available now are:
- TW015N120C
- TW030N120C
- TW045N120C
- TW060N120C
- TW140N120C
Additional information about Toshiba’s power 1200V SiC MOSFETs can be found here: TW015N120C, TW030N120C, TW045N120C, TW060N120C, and TW140N120C