SEOUL. MagnaChip has commenced volume production on its P-series Insulated Gate Bipolar Transistors (IGBT) power modules, the MBW100T120PHF, which target high-voltage industrial applications. IGBT P-series devices support high current and high voltage capabilities of 1200 V and 100 A, and are operable at up to four times the rated current.

Thanks to Field-Stop Trench technology, MBW100T120PHF devices support saturation voltages (Vce(sat)) as low as 1.71 V. Field-Stop Trench technology also reduces switching losses and allows designers to improve switching frequency, which means smaller, less expensive capacitors and inductors can be used in circuits.

Optimized resistance within P-series IGBT MBW100T120PHF devices enables a parallel structure design, allowing multiple chips to operate simultaneously.

For more information, visit www.magnachip.com.